Abstract
A near-field scanning optical microscopy (NSOM) and a double-frequency femtosecond laser (400 nm, 100 fs) were applied to push the optical resolution further down to sub-50 nm on thin UV photoresist. A 20-nm feature size can be obtained. It is at a resolution of λ/20 ( λ: laser wavelength) and a/2 ( a: NSOM probe aperture diameter), respectively. It is proved that laser power and exposure time can affect feature size of lithography patterns. In this paper, the effect of probe-to-sample distance on dot-pattern features is studied, and different dot-pattern shapes are generated: dumbbell-dot, ellipsoid-dot and circle-dot. The simulated light field spatial distributions across the nano-aperture based on Bethe–Bouwkamp model is found to agree with experimental results very well.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
