Abstract
ABSTRACTVapor deposition of smooth, microstructurally uniform amorphous films on dissimilar substrates requires coalescence of clusters that form during initial nucleation. We have developed techniques that provide sub-monolayer sensitivity to this phenomenon, relying on real time spectroscopie ellipsometry observations during ultrathin film growth (thicknesses < 50 Å). An investigation of tetrahedrally-bonded amorphous semiconductors lends insights into the role of nucleation density and adatom surface diffusion in determining the ultimate atomic-scale roughness on the film.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
