Abstract
2014 Short-time heat treatments of undoped high-resistivity and Se-doped GaAs samples have been performed in an H2 flow at temperatures from 750 °C up to 850 °C. Surface conductivity changes have been determined by Schottky barrier measurements. After annealings, undoped samples showed a n-p double layer at the surface, while in Se-doped samples only new acceptors were detected. REVUE DE PHYSIQUE APPLIQUEE TOME 13, JUIN 1978, Classification Physics Abstracts 73 . 40N
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