Abstract
During MeV 14N + backscattering analysis to detect sub-monolayer heavy impurities, a “beam effect”, i.e. high impurity loss was found. To clarify the situation a systematic study was done on gold films in the thickness range of 0.5–3200 atom/nm 2 evaporated onto silicon. Results suggest that sputtering of cascades induced by energetic nitrogen ions is responsible for the phenomenon. The sputtering yield of gold was a linear function of surface coverage in the range of 0.5–130 atom/nm 2. For thick overlayers (⩾ 800 atom/nm 2) a saturation value of S ≊ 0.8 gold/N + was found. Between these two regions intermediate behavior was experienced. A rough theoretical model is outlined for overlayer sputtering in the MeV energy region.
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