Abstract
Surface hydrogen and growth mechanisms are investigated for synchrotron radiation (SR)-assisted gas source molecular beam epitaxy (SR-GSMBE) using Si 2 H 6 on the Si(100) surface in the low-temperature region. The surface silicon hydrides (deuterides) are monitored in situ during the epitaxial growth by means of infrared reflection absorption spectroscopy with a Si(100) substrate and a Cosi 2 buried metal layer. It is concluded that the chemisorption of gas-phase reactive species such as SiH n and H generated by SR irradiation and the subsequent hydrogen desorption are the key mechanisms of SR-GSMBE at low substrate temperatures.
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