Abstract
Significant errors in the determination of carrier profiles obtained by the Hall-effect method result if the depletion effect at a semiconductor surface is not taken into account. A practical procedure for correcting the apparent measured carrier profiles for this surface-depletion effect is described for nonuniformly doped semiconductors. This correction method is then applied to Si-implanted GaAs and the results are compared with those of capacitance-voltage measurements. The number of total trapped charges in free-surface states are estimated to be about 1Ă1012 cmâ2.
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