Abstract
In this study we present investigations of silicon growth and etching in a dilute SiH4/H2 plasma near the partial chemical equilibrium in order to study nucleation processes at the growth surface in plasma CVD. μc-Si:H and a-Si:H deposited on Corning 7059 glass substrates was simultaneously exposed to an extremely diluted SiH4 in H2 VHF plasma at a frequency of 100 MHz. Under conditions used in our study simultaneous growth of μc-Si:H and etching of a-Si:H is observed. The results support the μc-Si:H growth model in which the net growth rate is the difference of a deposition and an etch rate.
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