Abstract
Sb2S3 thin films to be used in optoelectronic applications were produced on glass substrates, via chemical bath deposition method (CBD) at different pH values. The optical properties of these films such as T%, R%, n, k, e1 and e2 (real and imaginary) were calculated using the absorbance values measured at room temperature with UV spectrophotometer. Critical surface tension was measured by Zisman method, and found as 43.2, 97.4, 150.7 and 123.8 mN/m for pH: 9, 10, 11 and 12. Film thicknesses and surface roughness (Rq) were measured to be 125; 412; 205 and 138 nm, and 1.64; 30.31; 49.49 and 19.76 nm for pH: 9, 10, 11 and 12, respectively. Optical band gap (Egap) was calculated as 2.24; 2.11; 2.25 and 2.32 eV for pH: 9, 10, 11 and 12, respectively. Average electrical resistivity of the Sb2S3 thin films was calculated to be 35.41; 36.81; 36.76 and 28.72 Ωcm for pH: 9, 10, 11 and 12, respectively. According to the results obtained, usage areas of these films in optoelectronic applications are discussed.
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