Abstract
Confinement factor (Γ) of semipolar (202¯1) green laser diodes (LDs) is limited by relaxation of coherency stresses in the waveguiding heterostructure. In this paper, we demonstrate the suppression of relaxation by blocking glide of pre-existing threading dislocations using limited area epitaxy (LAE). With LAE, we show a factor of three increase in thickness before the observation of significant misfit dislocation formation for (202¯1) oriented In0.08Ga0.92N/GaN heterostructures. We then apply this technique to fabricate coherent AlGaN-cladding-free LDs with 73% enhanced Γ relative to planar devices without LAE, having an emission wavelength of 495 nm and threshold current density of 10.7 kA/cm2. This technique is readily applicable to AlGaN or AlInGaN cladding in addition to InGaN waveguiding layers to improve Γ of semipolar LDs.
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