Abstract
In this study, ultraviolet (UV) ozone post treatment is proposed as an effective method of suppressing gate leakage current associated with the moisture absorption of lanthanum oxide (La2O3) films. It is considered that suppression effects come from the healing of oxygen vacancies in the film by the UV ozone post treatment, since the oxygen ambient annealing also shows similar suppression effects. As compared with the oxygen ambient annealing, however, the UV ozone treatment does not enhance the interface layer thickness between the La2O3 and Si substrates, whereas the oxygen ambient annealing does. Therefore, the UV ozone post treatment is an effective method of suppressing the moisture absorption of La2O3 films.
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