Abstract
The current voltage characteristics of short channel nMOSFET in the subthreshold region is investigated by two-dimensional numerical analysis. Deep ion implantation of acceptor impurities beneath the channel is found to improve the subthreshold characteristics. Structure optimization for the deeply ion-implanted short channel MOSFET is carried out to obtain low subthreshold current with steep semilogarithmic slope, which are almost comparable with the long channel MOSFET.
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