Abstract
We report on void defect formation in (202¯1¯) semipolar InGaN quantum wells (QWs) emitting in the green spectral region. Fluorescence and transmission electron microscopy studies indicate that this type of defect is associated with voids with {101¯1}, {101¯0}, and {0001¯} side facets in the QW region. Systematic growth studies show that this defect can be effectively suppressed by reducing the growth rate for the active region. Green light-emitting diodes (LEDs) with reduced active region growth rate showed enhanced power and wavelength performance. The improved LED performance is attributed to the absence of void defects in the active region.
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