Abstract
N-type semiconductor indium tin oxide (ITO) nanoparticles are used to effectively suppress the fluorescence blinking of single near-infrared-emitting CdSeTe/ZnS core/shell quantum dots (QDs), where the ITO could block the electron transfer from excited QDs to trap states and facilitate more rapid regeneration of neutral QDs by back electron transfer. The average blinking rate of QDs is significantly reduced by more than an order of magnitude and the largest proportion of on-state is 98%, while the lifetime is not considerably reduced. Furthermore, an external electron transfer model is proposed to analyze the possible effect of radiative, nonradiative, and electron transfer pathways on fluorescence blinking. Theoretical analysis based on the model combined with measured results gives a quantitative insight into the blinking mechanism.
Highlights
Nowadays, many groups are enforcing their efforts on suppressing fluorescence blinking of quantum dots (QDs)
The fluorescence intensity trajectories for single QDs on glass coverslips and encased in indium tin oxide (ITO) were recorded by the confocal scanning fluorescence microscope system
The N-type semiconductor ITO nanoparticles have a higher Fermi level than that of QDs and the Fermi level of ITO is located above its conduction level[13]
Summary
Many groups are enforcing their efforts on suppressing fluorescence blinking of QDs. The blinking was considered as random processes of ionization and neutralization under continuous laser excitation, such as Auger ionization and transient electron transfer from core to resonant energy states on or near the surface[18]. The blinking was considered as random processes of ionization and neutralization under continuous laser excitation, such as Auger ionization and transient electron transfer from core to resonant energy states on or near the surface[18] This rationale motivated researchers to investigate blinking suppression of QDs by perturbing the energy states of QDs, modifying Auger recombination rates, changing positive charged state back to the neutral state and so on. ITO is suitable for the applications in NIR QD-based optoelectronic devices due to its high transmission in the NIR region
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
