Abstract

The two possible pathways toward artificial intelligence (AI)—(i) neuroscience-oriented neuromorphic computing [like spiking neural network (SNN)] and (ii) computer science driven machine learning (like deep learning) differ widely in their fundamental formalism and coding schemes (Pei et al., 2019). Deviating from traditional deep learning approach of relying on neuronal models with static nonlinearities, SNNs attempt to capture brain-like features like computation using spikes. This holds the promise of improving the energy efficiency of the computing platforms. In order to achieve a much higher areal and energy efficiency compared to today’s hardware implementation of SNN, we need to go beyond the traditional route of relying on CMOS-based digital or mixed-signal neuronal circuits and segregation of computation and memory under the von Neumann architecture. Recently, ferroelectric field-effect transistors (FeFETs) are being explored as a promising alternative for building neuromorphic hardware by utilizing their non-volatile nature and rich polarization switching dynamics. In this work, we propose an all FeFET-based SNN hardware that allows low-power spike-based information processing and co-localized memory and computing (a.k.a. in-memory computing). We experimentally demonstrate the essential neuronal and synaptic dynamics in a 28 nm high-K metal gate FeFET technology. Furthermore, drawing inspiration from the traditional machine learning approach of optimizing a cost function to adjust the synaptic weights, we implement a surrogate gradient (SG) learning algorithm on our SNN platform that allows us to perform supervised learning on MNIST dataset. As such, we provide a pathway toward building energy-efficient neuromorphic hardware that can support traditional machine learning algorithms. Finally, we undertake synergistic device-algorithm co-design by accounting for the impacts of device-level variation (stochasticity) and limited bit precision of on-chip synaptic weights (available analog states) on the classification accuracy.

Highlights

  • Machine learning, especially deep learning has been a de facto choice for solving a wide range of real-world complex tasks and has contributed to the unprecedented success story of artificial intelligence (AI) in recent years

  • To mimic the stochastic switching dynamics of the field-effect transistors (FeFETs), we introduce a distribution of the coercive field (VC) for the ferroelectric domains

  • We use the saturation threshold method taken from Yousefzadeh et al (2018) which prevents the firing threshold from being further increased once it surpasses the saturation threshold, e.g., once it issued a certain number of spikes

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Summary

Introduction

Especially deep learning has been a de facto choice for solving a wide range of real-world complex tasks and has contributed to the unprecedented success story of artificial intelligence (AI) in recent years. For applications like smart devices, wearables for healthcare monitoring, or autonomous drones for spatial exploration that require constant real-time information processing, we want to embed implementation of neural networks on the edge. This imposes stringent constraints in terms of power, latency, and footprint area and requires us to rethink the approach toward building hardware for deep learning. One obvious point of difference is that neurons are implemented using continuous non-linear functions like sigmoid or ReLu, whereas biological neurons compute using asynchronous spikes that indicate the occurrence of an event Using such asynchronous event-based information processing may significantly bring down the hardware resources in terms of computational power and footprint area. There lies several considerations for hardware implementation of SNN that must be undertaken to minimize hardware resources (area and energy), some of which are discussed below

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