Abstract
Abstract A description is given of a simple vitreous carbon strip heater for transient annealing of ion- implanted semiconductors. Antimony-implanted silicon samples (0.4–5.8 × 1015 cm−2 at 35 or 80 keV) were annealed for 15–600 s at temperatures in the range 650–910°C. Annealing was confirmed by Rutherford backscattering and electrical measurements. Supersaturated solid solutions of Sb in Si were observed with a maximum solubility of 1.0 × 1021 Sb cm−3 at 650°C. Electrical measurements appear to give solubilities lower than those determined by backscattering.
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