Abstract
The photon drag effect in semiconductors has been studied over a wide range of light intensities. The experiment was carried out on p-type germanium samples by means of a TEA CO2 laser at 10.6 μm with a peak power of 1.2 MW. The superlinear dependence of photon drag voltage on incident power density was observed at room temperature for a sample of 2.6-Ω cm resistivity.
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