Abstract

The outstanding performance of organic-inorganic metal trihalide solar cells benefits from the exceptional photo-physical properties of both electrons and holes in the material. Here, we directly probe the free-carrier dynamics in Cs-doped FAPbI3 thin films by spatiotemporal photoconductivity imaging. Using charge transport layers to selectively quench one type of carriers, we show that the two relaxation times on the order of 1 μs and 10 μs correspond to the lifetimes of electrons and holes in FACsPbI3, respectively. Strikingly, the diffusion mapping indicates that the difference in electron/hole lifetimes is largely compensated by their disparate mobility. Consequently, the long diffusion lengths (3~5 μm) of both carriers are comparable to each other, a feature closely related to the unique charge trapping and de-trapping processes in hybrid trihalide perovskites. Our results unveil the origin of superior diffusion dynamics in this material, crucially important for solar-cell applications.

Highlights

  • The outstanding performance of organic-inorganic metal trihalide solar cells benefits from the exceptional photo-physical properties of both electrons and holes in the material

  • Our results highlight the origin of nearly balanced diffusion dynamics of electrons and holes in hybrid trihalide perovskites, which is highly desirable for photovoltaic applications

  • In order to shed some light on the tr-illuminated microwave impedance microscopy (iMIM) data, we studied the carrier dynamics in perovskite thin films with electron or hole transport layers[6,7,9,10,22,23]

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Summary

Results

The PSC thin film in this study, hereafter labeled as Sample A, is 5% Cs-doped FA lead triiodide deposited on cover glasses In the sample-scan mode, the first set of piezo-stage aligns the center of the laser spot to the tip, whereas the sample is set in motion by the piezo-scanner[33,34]. In both configurations, one can fix the relative position between tip and sample and perform time-resolved (tr-iMIM) measurements[27]. N(r) can be described by the diffusion equation[27,37,38]

GHz iMIM
Discussion
10 Sample C 2A2
Methods
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