Abstract
Electrical resistivity of LaO0.5F0.5Bi(S0.9Se0.1)2 have been measured at a temperature range of 2.8 ∼ 300 K by applying several hydrostatic pressures. Pressure-induced superconducting phase was observed above a pressure P of 0.85 GPa and Tc increased from 2.86 K to 8.42 K. The sudden increase of Tc in LaO0.5F0.5Bi(S0.9Se0.1)2 results from the structural phase transition from tetragonal (P4/nmm) to monoclinic (P21/m). Structural phase transition pressure Pc of LaO0.5F0.5Bi(S0.9Se0.1)2 is higher than that of LaO0.5F0.5BiS2. The increase of Pc is ascribed to the suppression of the displacement parameter of the in-plane chalcogen site induced by chemical pressure of Se-substitution.
Highlights
The BiS2-based layered compounds Bi4O3S4 and LaO0.5F0.5BiS2 have been attracting attention as the novel superconductor.[1,2,3,4,5,6,7] LaOBiS2 has a layered structure, which consists of a charge suppling layer [LaO]+ and a conducting layer [BiS2]
Chemical pressure in both materials is strongly related with degree of displacement parameter of Ch1-site located at in-plane, and applying chemical pressure results in reduction in the displacement parameter.[8,9,10]
Our results suggest that the increase of Pc in group 1 materials is proportional to the suppression of the displacement parameter by increasing chemical pressure
Summary
The BiS2-based layered compounds Bi4O3S4 and LaO0.5F0.5BiS2 have been attracting attention as the novel superconductor.[1,2,3,4,5,6,7] LaOBiS2 has a layered structure, which consists of a charge suppling layer [LaO]+ and a conducting layer [BiS2]-. In the case of group 2, small lanthanide3+-substitution for R site increases the chemical pressure, and emerges bulk superconductivity with the optimum R = Nd3+ at T c of 4.7 K.5 Both methods apply a positive chemical pressure for the conducting layer, because these chemical pressures generate shrinking force to in-plane of the conducting layer.[2] The origin of increasing T c in the BiS2-based superconductors can be explained by the scenario of in-plane chemical pressure, proposed by Mizuguchi et al.[2] In addition, chemical pressure in both materials is strongly related with degree of displacement parameter of Ch1-site located at in-plane, and applying chemical pressure results in reduction in the displacement parameter.[8,9,10]. 1 materials, we performed the electrical resistivity measurements of LaO0.5F0.5Bi(S0.9Se0.1)[2] in hydrostatic pressure
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