Abstract
We present measurements of the superconducting transition temperature of ultrathin aluminum films grown epitaxially on silicon. The transition temperature is found to be near the bulk ${T}_{c}$ and is significantly lower than that found in disordered films. Some initial experiment on growing epitaxial Pb films on PbTe are also discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.