Abstract
We propose using gallium suboxide, Ga2O, as a Ga source for the growth of high-purity Ga2O3 by vapor phase epitaxy. It is shown in a thermochemical analysis that the suboxide can be generated effectively in the reaction between Ga2O3 and Ga and subsequently be utilized for the epitaxial growth of Ga2O3. A demonstration of Ga2O3 crystal growth was carried out on β-Ga2O3 (001) substrates with Ga2O and O2 used as the gaseous precursors, resulting in high-purity epitaxial layers. No possible donor impurities from the sources or growth environment, such as Si or Sn, were detected in the grown layers.
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