Abstract
A method for reversing the polarity of a photoresist mask is presented. A silicon dioxide mask formed by selective liquid phase deposition reproduces the features defined in photoresist with submicron accuracy. The method is demonstrated with photoresist patterns thinned to 200 nm line width with oxygen plasma, thus extending the applicability of plasma thinning from light-field structures (lines and dots) to dark-field structures (trenches and holes).
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