Abstract
Silicon permeable base transistors (PBTs) with monocrystalline buried CoSi2 gates have been fabricated by local high dose cobalt ion implantation through a grid-like mask into epitaxial Si (100) layers and homoepitaxial Si over-growth by low-pressure vapour phase epitaxy. The PBTs show good DC characteristics and pinchoff at zero or at low negative gate voltages, respectively. Transistors with a grating periodicity of 0.6 μm reach a maximum trans-conductance gm of 70 mS/mm. The highest obtained transit frequency is fT = 6 GHz.
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