Abstract
Subgap absorption of boron-doped and undoped a-SiC:H alloys is studied by photothermal deflection spectroscopy(PDS). In undoped a-SiC:H, the PDS deduced mid-gap states density Ns shows saturation at 2–5% carbon flow ratio (C2H2/SiH4), while Urbach energy monotonously increases with increasing carbon content. Doping with boron to a-SiC:H also increases Ns and Urbach energy, which tendency is similar to that of a-Si:H. There is no evidence of boron compensating the carbon-induced defects in a-SiC:H. The photoconductivity enhancement of a-SiC:H by doping boron must be attributed to the change of occupation in the gap states.
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