Abstract
Optically detected magnetic resonance is employed to identify key factors governing dynamic nuclear polarization (DNP) in a semiconductor. We demonstrate that the extent of DNP can be efficiently controlled by varying lifetime of the localized electrons that transfer spin angular momentum to nuclei. The ultimate speed of a DNP process, on the other hand, is determined by the strength of hyperfine interaction that drives DNP. We show that about 50$%$ nuclear spin polarization of a P${}_{\mathrm{In}}$ antisite in InP can be achieved by shortening electron lifetime within a remarkably short time (0.1 ms) due to strong hyperfine coupling.
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