Abstract
Self-consistent sub-band calculations are presented for lattice-matched InGaAs-InP heterojunctions. The carriers are transferred from the n- or p-doped InP to the InGaAs, where a two-dimensional (2D) electron or hole gas is formed at the interface. The authors consider both n-type and p-type background doping in the InGaAs. Since unintentionally doped InGaAs tends to be n-type an accumulation layer with a 2D electron gas is usually formed if the InP is n-doped. They analyse the determination of the band bending in some detail and find that a proper treatment of this factor is much more important for an accumulation layer than for an inversion layer.
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