Abstract
We present here an ultrafast thermal NIL technology, which enables the patterning of full wafers on the 100μs time-scale. This technique makes use of stamps with a heating layer integrated beneath their nanostructured surfaces. Injecting a single, short (<100μs), intense current pulse into the heating layer causes the surface temperature of the stamp to raise suddenly by hundreds of degrees°C, resulting in the melting of the thermoplastic resist film pressed against it and the swift indentation of the nanostructures. This paper introduces the main aspects of this technology, namely the process concept, the stamp structure, and the main features of the equipment by which the process at the wafer scale was implemented.
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