Abstract
In this work, the effect of high-temperature doping and proton irradiation on the depth profile and the creation of layers on the surface of single-crystal silicon was studied. The study used singlecrystal n-type silicon samples doped with phosphorus during growth. These samples were first doped with platinum and chromium and after polishing they were irradiated with protons with an energy of 2 MeV, a dose of 5.1 × 1014 cm–2 at the EG-5 accelerator. Studies of the optical properties of the sample surface were carried out using an ELLIPS-1991 spectroscopic ellipsometer at room temperature
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
