Abstract
In this paper, the self-absorption of InGaN quantum wells at high photon density is studied based on a rectangular ridge structure. The ridge structure was fabricated based on a standard GaN-based blue LED wafer grown on (0001) patterned sapphire substrate. The high-density photons were obtained by a high-power femtosecond laser with high excitation of 42kW/cm2 at room temperature. Based on the analysis of the photoluminescence intensities of the InGaN quantum wells, we found that the absorption coefficient of the InGaN quantum wells varies with the background photon density. The results revealed that the final absorption coefficient of the InGaN quantum well decreases with the increase of photon density, which can be 48.7% lower than its normal value under our experimental conditions.
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