Abstract
ZnS has attracted wide attention for its potential applications in optoelectronic fields, such as solid-state lighting, fluorescent probes, electroluminescent devices and field emission displays. In this work, Mn2+-doped ZnS with hexagonal structure were prepared by high temperature solid phase method using MnCO3 as manganese source, and the effect of Mn2+ doping on ZnS was studied. The results show that the particle shape of ZnS doped with Mn2+ is hexagonal structure, Mn2+ doping changes the position and intensity of ZnS absorption spectrum and photoluminescence band. The absorption peak at 340 nm progressively moves to the right as Mn2+ doping rises, a new conspicuous absorption peak forms in the visible area, and the maximum photoluminescence intensity of ZnS:Mn2+ steadily increases. However, when the Mn2+ doping exceeds the ratio of 4 at.%, the photoluminescence intensity showed a decreasing trend. This indicates that the number of effective emission centers reaches the maximum when the doping concentration of Mn2+ is the most suitable.
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