Abstract
Sapphire has been the most widely used substrate material in LEDs, and the demand for non-C-planes crystal is increasing. In this paper, four crystal planes of the A-, C-, M- and R-plane were selected as the research objects. Nanoindentation technology and chemical mechanical polishing technology were used to study the effect of anisotropy on material properties and processing results. The consequence showed that the C-plane was the easiest crystal plane to process with the material removal rate of 5.93 nm/min, while the R-plane was the most difficult with the material removal rate of 2.47 nm/min. Moreover, the research results have great guiding significance for the processing of sapphire with different crystal orientations.
Highlights
Due to the excellent material properties such as high hardness, good light transmittance, high chemical and thermal stability, sapphire has been widely used in high-end technical fields such as communications, electronics, aerospace, optics, and biological engineering [1,2,3,4,5,6]
It suggested that the experimental dataofwere true with different crystal orientations increased rapidly in range of 0–100 nm of the indentation depth, withreliable different crystaloforientations increased in experiments
As the polishing time continued inferred that the sapphire wafers with the crystal orientations of the A, M, and R-plane had reached extend to 12~14 h, the surface roughness was stable near its minimum value
Summary
Due to the excellent material properties such as high hardness, good light transmittance, high chemical and thermal stability, sapphire has been widely used in high-end technical fields such as communications, electronics, aerospace, optics, and biological engineering [1,2,3,4,5,6]. Interaction of nanoscale damages with static and dynamic contact and induced damages in alumina by lots of researchers have focused on studying the processing performance of sapphire usingNowadays, nanoindentation. Researchers Luo haveetfocused studying processing performance of sapphire planes in mechanical planarization and revealed the removal mechanism of sapphire substrates. This paper will correlate the nanoindentation processing a lot of research has been performed to reveal the micromechanical behavior of experiment with the results of sapphire chemical mechanical polishing and reveal the nature of sapphire by nanoindentation. This paper will correlate the nanoindentation experiment with the anisotropy characteristics on the sapphire processing results Apart from that, it will lay the results of sapphire chemical mechanical polishing and reveal the nature of the anisotropya theoretical basis significant guidanceresults. Significant guidance for the selection of parameters in processing with different crystal orientations
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