Abstract
Ballistic electron transport in the nanogap devices will make it practical to combine the advantages of solid-state devices and vacuum electron devices including high integration and high frequency characteristics. Although a number of experiments have been exploited on frequency characteristic in nanogap, less modeling or calculations were investigated at such scale yet. In this paper, the concept of mean flight time is proposed in order to theoretically determine the frequency in nanoscale. Traditionally, we have to first determine the frequency response diagram and then deduce the cut-off frequency. This work presents a new method for exploring the frequency characteristics of electron transport in a nanogap structure by calculations and numerical simulations. A double-gate structure was applied in the simulations, and the results suggest that the nanogap structure can perform in the THz range. Additionally, an equivalent circuit model was adopted to demonstrate the validity of this method. Our results provide a model for the intrinsic ballistic transportation of electrons inside the nanogap electron devices.
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