Abstract
With the development of semiconductor integrated circuit manufacturing technology, the defects that lead to yield failure are also occurring constantly. In our work, the aluminum bulge defects in the metallization process are briefly analyzed, it will lead to macroscopic chromatic aberration and yield failure. It was confirmed by analyzing the crystal structure of titanium nitride (TiN), which the (111) crystal plane of TiN film can greatly improve the surface roughness of film. On the other hand, by changing the etching conditions of tungsten film, the etching selectivity ratio of tungsten film and TiN film is increased, so as to reduce the defects. Thus, the main factors affecting the bulge defects in the metallization process include the microstructure of TiN film and the etching process of tungsten film.
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