Abstract
Gate drive patterns of the Si/SiC hybrid switch consisting of a Si IGBT and a SiC MOSFET possesses a high degree of freedom. However, the dv/dt caused by different switching patterns may bring the issues of different common mode (CM) electromagnetic interference (EMI) generation or have detrimental effect on the reliability of the Si/SiC hybrid switch based power converters. In this paper, when different gate drive patterns are adopted, the CM EMI characteristics of the Si/SiC hybrid switch based half-bridge DC/DC converter is explored. It is shown that the CM EMI generation can be reduced when the Si/SiC hybrid switch reflects the switching characteristics of the Si IGBT, while its switching losses have been increased.
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