Abstract
Silicon sieve with nano-scale holes array used as atomic lithography aperture had been realized with a method combining of deep dry etching and silicon anisotropic wet etching. The influence of etchant concentration and temperature on the etching rate is carefully studied. Unusual bath temperature at 40° was used in the wet etching process. With a sputtered layer of Cr (300nm) as the wet etching mask and a layer of Al (700nm) as the deep dry etching mask nano holes array with 108nm feature size are obtained on single crystalline silicon.
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