Abstract
In this paper, TaN thin film were deposited on ceramic substrates by D.C. magnetron sputtering. The surface morphology of two types of TaN thin film resistors were investigated by SEM. The characteristics of the TaN thin film resistor was also studied. The key point was put on the TCR of the TaN thin film resistors. The resistors were trimmed by the autoxidation process and the anodic oxidation process, and the TCR values of about +21ppm/°C and-137.3ppm/°C in average have been achieved respectively.
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