Abstract
Sb-doped ZnO thin films with different values of Sb concentrations are deposited on glass substrate by using spin-coating technique. The influences of Sb doping content on the microstructural, photoluminescence and Raman properties of ZnO film are systematically investigated by X-ray diffraction (XRD), transmission spectrum, photoluminescence (PL) spectrum and Raman scattering spectrum. The results indicate that ZnO thin film doped with Sb exhibits a hexagonal wurtzite structure with preferred c-axis orientation. The strong violet emission peak located at 3.11 eV is observed in the Sb-doped ZnO thin film by photoluminescence. Conbining the Raman scattering spectrum with photoluminescence, it is concluded that the strong violet emission peak related to SbZn-O complex defect in ZnO:Sb film.
Highlights
Sb-doped ZnO thin films with different values of Sb concentrations are deposited on glass substrate by using spin-coating technique
The influences of Sb doping content on the microstructural, photoluminescence and Raman properties of ZnO film are systematically investigated by X-ray diffraction (XRD), transmission spectrum, photoluminescence (PL) spectrum and Raman scattering spectrum
The results indicate that ZnO thin film doped with Sb exhibits a hexagonal wurtzite structure with preferred c-axis orientation
Summary
Màng mỏng ZnO pha tạp Sb với những nồng độ khác nhau được phủ lên đế thủy tinh và đế silic bằng phương pháp spincoating. Ảnh hưởng của sự pha tạp Sb lên những khuyết tật có trong màng mỏng ZnO được nghiên cứu bằng phổ photoluminescence (PL) và phổ Raman, nhiễu xạ tia X; nhằm rút ra kết luận về những khuyết tật hiện diện trong màng mỏng ZnO thuần và ZnO pha tạp Sb, từ đó làm nền tảng cho định hướng nghiên cứu chế tạo màng ZnO mang tính chất của bán dẫn loại p. Từ khóa: Tập Sb, Phổ PL, nhiễu xạ tia X, khuyết kẽm VZn, kẽm xen kẽ Zni
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