Abstract
This study aims to explore the passivation behavior and growth mechanism of the Ti-6Al-3Nb-2Zr-1Mo alloy in an oxygen-free environment, taking into account various film-forming potentials and solution pH levels in the process. The point defect model is employed to study the growth mechanism of the passivation film. A film-forming potential is selected within the stable passivation region for polarization, followed by conventional electrochemical tests, Localized Electrochemical Impedance Spectroscopy, X-ray photoelectron spectroscopy characterization, and Glow Discharge Optical Emission Spectrometry. Experimental findings indicate that the passivation film on the Ti-6Al-3Nb-2Zr-1Mo alloy surface demonstrates characteristics of an n-type semiconductor. Increasing the film-forming potential leads to a decrease in the donor point defect density. Meanwhile, elevating the pH of the solution decreases the oxygen vacancy diffusion coefficient from 7.8 × 1019 to 4.3 × 1019, thus improving the corrosion resistance of the passivation film.
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