Abstract
A nano-film transistor test structure, simulating nano Air-gap thin film transistor (TFT), is developed to study TFT's breakdown when it vibrates at high temperature. To achieve point-wise linear GPa mechanical stress (MS), in situ detection of probe integrated with digital spiral micrometer is designed. Under various GPa order and temperatures loading MS, gate leakage current is measured to study TFT's breakdown. Hot hole injection with high mobility is proposed to be the cause of TFT's breakdown.
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