Abstract

Optimized chemical structure was proposed for boron-doped Si quantum dots superlattices. Boron-doped Si quantum dots superlattices were then synthesized by a co-sputtering technique, and characterized for their promising application in all-Si tandem solar cells. The formation of Si quantum dots was confirmed by transmission electron microscopy. The effect of boron dopant concentration on the Si crystallization was investigated. Lateral resistivity of Si quantum dots superlattices was studied. The results showed that boron addition does not affect the quantum dot size, but significantly reduces the resistivity of Si quantum dots superlattices.

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