Abstract
The microlithographic process is the core process in semiconductor device manufacturing. With continuous shrinkage in device geometry, deep-ultraviolet (DUV) photolithography is required to meet the industry needs. Modern microlithography is based on chemically-amplified (CA) resist via the acid-catalyzed deprotection of the pendant groups, which can be induced by either irradiation or thermolysis. Thermally-activated deprotection can occur in unexposed areas at temperatures close to the post-exposure bake temperature. Thermal deprotection can be detected by various techniques. In this paper, FTIR, TGA, TD-GC-MS and temperature-programmed ToF-SIMS are used to study the thermal deprotection in a commercial CA resist. The initiation temperature of thermal deprotection depends on the techniques used. Understanding the thermal deprotection mechanism is very important for materials selection and process optimization.
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