Abstract
In the present work, we studied the effect of Sn4+ and Cr3+ doping on the structural, ferroelectric, and dielectric properties of BaSnxCryTi1−(x+y)O3. The materials were prepared by a combination of high-energy mechanical milling and solid-state reactions. The X-Ray Diffraction (XRD) analysis and Rietveld refinements confirmed the presence of a single tetragonal phase for the pure and doped samples. The SEM study revealed that the microstructure is highly susceptible to the addition of both dopants, causing an evident grain refinement. On the other hand, the addition of Sn4+ and Cr3+ had a strong influence on ferroelectric properties, as observed by the pinching of the ferroelectric hysteresis loops. The addition of Sn4+ increases the remnant and maximum polarization, as the Cr3+ doping promoted the contrary effect. Co-doping with Sn4+ and Cr3+ resulted in a maximum energy storage value of 0.2574J/cm3 with a efficiency of up to 65%, overcoming the values of pure BT. The relative permittivity of all doped samples remained in values of ∼1000, just a little below the permittivity of pure BT.
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