Abstract
The effect of nitrogen pressure on the grain boundary chemistry of GPS silicon nitride has been investigated. Different pressure values in the Y–Al–Si–Al–O–N system produced silicon nitride specimens with similar microstructures but different grain boundary phase composition. At intermediate and high pressures (4 and 10 MPa), the intergranular phase is amorphous in triple junctions, whereas it is partially crystallised at lower pressure (1.5 MPa). HRTEM reveals the presence of crystallised YSiO 2 N and Si, which is ascribed to the silicon nitride decomposition at low pressure. An attempt to correlate phase composition and toughness has been done.
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