Abstract
This article presents the results of studies of the distribution profiles of implanted iron atoms into silicon, depending on the irradiation dose and annealing temperature by the RBS method. The results obtained confirm similar data obtained by SIMS. The effect of thermal annealing on the distribution of iron and other impurities, in particular, oxygen, has been studied. The possibility of using the RBS method for analyzing the concentration distribution of doped impurities and the interaction of impurities with each other is presented.
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