Abstract
Medium power silicon controlled rectifiers have been exposed to a maximum integrated fastneutron flux of 4 x 1013 nvt. An increase in the current required to turn on thie controlled rectifier and an increase in the break-over voltage were observed after irradiation. The saturation voltage increased as a result of irradiation, exceeding 200 volts at an integrated fast neutron flux of 4 x 1013 nvt. These changes are attributed to a decrease of the minority carrier lifetime as reflected by a decrease in alpha.
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