Abstract
The electrical properties of an n +–p–p + structure-based single-crystalline silicon solar cell were studied by impedance spectroscopy, I– V and spectral response. The impedance spectrum is measured in dark, under different intensities (14, 43, 57, 71, 86, 100 mW/cm 2) of illumination and wavelengths (400–1050 nm) of light. Under dark and at low intensities of illumination (<50 mW/cm 2) the impedance spectra show perfect semicircles but at high intensities the semicircles are distorted at low frequencies. It is found that illumination provides an additional virtual R 1 C 1 network parallel to the initial bulk R p C p network observed under dark conditions. The value of virtual resistance R 1 depends on the illumination wavelength and shows an inverse relationship with the spectral response of the device.
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