Study of selective deposition of TaN thin films on OTS patterned Si(100) substrates

Abstract

Cubic TaN thin films have been selectively deposited on Si(100) substrates in the temperature range of 400 - 500 °C by combination of micro-contact printing (μCP) and metalorganic chemical vapour deposition (MOCVD) methods. The patterned Si(100) substrates were initially fabricated with the self-assembled monolayers (SAMs) using an organic molecule of octadecyltrichlorosilane (OTS) by μCP method. Ta(N(MeEt))3(NtBu) and NH3 were used for the growth of TaN thin film. For a selective growth study, we characterized the as-grown films with optical microscopy (OM), micro-Raman spectrometer and atomic force microscopy (AFM). In the beginning of film deposition TaN thin film preferred to grow on silicon surface area rather than OTS printed area due to hydrophilicity of silicon surface, however, the selectivity of TaN thin film deposition was depended on the deposition time in the deposition temperature range.