Abstract
The differential cross-sections of the 28Si(d,p0,p1,p2,p3) reactions for the determination of the depth distribution of silicon in near-surface layers of materials have been determined in the projectile energy region Ed,lab=1500–2000keV. The experiment was carried out in large energy steps of ∼50keV and for six detector angles between 145° and 170° (in steps of 5°). The obtained experimental data, although in principle suitable for Nuclear Reaction Analysis (NRA) studies, they present strong fluctuations, as expected from nuclear physics theory. A qualitative discussion of these fluctuations is also presented. The results are also compared to recent data from literature, taken at 150°.
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