Abstract
Pressure balance is a key technology for Press-Pack IGBT packaging, and is studied in this paper with its influence on the temperature distribution discussed in further when the device is turned on. By establishing the physical model of the Press-Pack IGBT device in the finite element simulation software, the influence of the internal flatness condition on the pressure balance is analyzed, and the variation of the average pressure difference with the flatness in different parallel scale of the chips is obtained. The thermal contact resistance and the electrical contact resistance parameters, which are dependent on the pressure, are then imported to perform the multi-field coupling, further investigating the effect of different pressure distributions on temperature distribution. The junction-case thermal resistance of the device with different flatness is compared experimentally. The results have demonstrated the influence of the flatness on the thermal resistance of the Press-Pack IGBT device.
Highlights
The packaging design concept of high-power PressPack IGBT(Insulated Gate Bipolar Transistor) is derived from the common Thyristor and IGCT (Integrated Gate Commutated Thyristor)
The differences in height of sub-modules causes uneven pressure distribution, which leads to the difference of electrical contact resistance and thermal contact resistance, and affects the temperature distribution of the chips
The external clamping pressure should be determined by the total area of the chips, so as to ensure the electrical and mechanical properties of the Press-Pack IGBT device, reducing the thermal contact resistance and the electrical contact resistance between the components to a relatively low value
Summary
The packaging design concept of high-power PressPack IGBT(Insulated Gate Bipolar Transistor) is derived from the common Thyristor and IGCT (Integrated Gate Commutated Thyristor). As a new form of packaging, research on Press-Pack IGBT devices is generally performed by finite element simulation methods , establishing thermal, electrical, and mechanical models[4,5,6,7]. Studied the impact of different installation conditions on the internal pressure and temperature distribution of the device through the finite element method and the IGBT chip thermal network model in 2013. Calculation and experimental verification on the thermal contact resistance between single FRD sub-module components in the Press-Pack IGBT device in 2016, to study the effect of temperature on contact thermal resistance. The differences in height of sub-modules causes uneven pressure distribution, which leads to the difference of electrical contact resistance and thermal contact resistance, and affects the temperature distribution of the chips. The junction-case thermal resistance of three devices with different flatness was designed and measured, so as to verify the effect of flatness on the junction-case thermal resistance and the junction temperature of the chips
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