Abstract
The spectral, temperature and time dependences of photoinduced changes of type-I excitonic transitions in GaAs/AlAs single QW structures were studied using wavelength-modulated reflectance spectroscopy. It was revealed that photoinduced changes of exciton spectra are closely related to the photoexcitation and redistribution of photocarriers in the QW region. It was obtained that the decay of photoinduced changes occurs in the millisecond range at 300 K and in the second range at 90 K. The temperature dependence of decay time is discussed in terms of both tunneling and thermal emission of photo-excited carriers from the QW.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
