Abstract
In order to prepare insulators for pH sensing ISFETs, silicon oxynitride thin layers have been grown in a PECVD process on structures. The bulk composition and the hydrogen incorporation are controlled and chosen in order to obtain a given surface density of sites which are responsible for the Nernstian pH sensitivity of the silicon nitride and can be chemically grafted with alkyl silane in order to obtain a pH insensitive surface. Two types of samples have been prepared varying gas flows (, , and ) and one with helium dilution (sample 2). The surface site densities vary from 16.4 μM · m−2 to 4.4 μM · m−2 (sample 3). They all present a Nernstian behavior in pH range 2–10; this behavior is preserved for two months in water. The pH point of zero charge of sample 3, calculated after an exposure to water through the site‐binding model previously developed by Harame et al., is 5.64; in agreement with a good stability of this material in water.
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